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2SK2212 Datasheet(PDF) 6 Page - Hitachi Semiconductor

Part No. 2SK2212
Description  Silicon N-Channel MOS FET
Download  10 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK2212 Datasheet(HTML) 6 Page - Hitachi Semiconductor

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2SK2212
6
Reverse Drain Current
I
(A)
DR
Body to Drain Diode Reverse
Recovery Time
500
200
100
20
50
10
5
di / dt = 100 A /
µs
V
= 0, Ta = 25
°C
GS
0.2
0.5
1
2
5
10
20
010
20
30
40
50
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
5000
1000
100
10
5
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
500
400
300
200
100
0
Gate Charge
Qg (nc)
20
16
12
8
4
0
V
= 50 V
100 V
150 V
DD
VGS
DS
V
Dynamic Input Characteristics
I
= 15 A
D
V
= 150 V
100 V
50 V
DD
8
16
243240
Drain Current
I
(A)
D
Switching Characteristics
5
500
200
100
20
50
10
V
= 10 V, V
= 30 V
PW = 5 µs, duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
0.2
0.5
1
2
5
10
20


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