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2SK1933 Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SK1933 Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 10 page 2SK1933 5 1.0 0.8 0.6 0.4 0.2 04 8 12 16 Gate to Source Voltage V (V) GS Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 2 A I = 1 A D 20 5 A 0.1 0.5 5 Drain Current I (A) D Static Drain to Source on State Resistance vs. Drain Current 0.2 0.5 1 2 5 10 1 2 10 20 50 V = 10 V GS Pulse Test 2.5 2 1.5 1 0.5 0 –40 0 40 80 120 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Pulse Test 160 I = 5 A V = 10 V GS D 2 A 1 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.1 0.2 0.5 1 5 10 2 Drain Current I (A) D Tc = 25°C –25°C 75°C Pulse Test V = 20 V DS |
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