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2SK1808 Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part No. 2SK1808
Description  Silicon N-Channel MOS FET
Download  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK1808 Datasheet(HTML) 4 Page - Hitachi Semiconductor

  2SK1808 Datasheet HTML 1Page - Hitachi Semiconductor 2SK1808 Datasheet HTML 2Page - Hitachi Semiconductor 2SK1808 Datasheet HTML 3Page - Hitachi Semiconductor 2SK1808 Datasheet HTML 4Page - Hitachi Semiconductor 2SK1808 Datasheet HTML 5Page - Hitachi Semiconductor 2SK1808 Datasheet HTML 6Page - Hitachi Semiconductor  
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2SK1808
4
60
0
100
50
150
Power vs. Temperature Derating
Case Temperature Tc (°C)
40
20
10
0.1
0.01
3
100
300
Drain to Source Voltage V
(V)
DS
Maximum Safe Operation Area
3
10
30
1000
10
s
µ
1
0.3
0.03
1
Ta = 25°C
Operation
in
this
area
is
limited
by
R
(on)
DS
1 ms
10
100
1 m
10 m
100 m
1
10
0.01
0.03
0.1
0.3
1.0
3
Pulse Width PW (S)
µ
µ
D = 1
0.5
0.2
0.1
0.05
0.02
1 shot Pulse
Tc = 25°C
θ ch – c(t) = s(t)
ch – c
ch – c = 3.57°C / W. Tc = 25°C
P
D =
PW
T
PW
T
DM
γ
.
θ
θ
0.01
Normalized Transient Thermal Impedance vs. Pulse Width


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