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2SK1666 Datasheet(PDF) 5 Page - Hitachi Semiconductor

Part No. 2SK1666
Description  Silicon N-Channel MOS FET
Download  9 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK1666 Datasheet(HTML) 5 Page - Hitachi Semiconductor

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2SK1666
5
Gate to Source Voltage VGS (V)
02
10
6
48
0.4
0.8
1.2
1.6
2.0
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
ID = 10 A
Pulse Test
30 A
20 A
0.5
10
200
Drain Current ID (A)
0.2
0.01
5
20
100
2
0.05
0.1
Static Drain to Source on State
Resistance vs. Drain Current
0.02
0.005
50
VGS = 10 V
VGS = 4 V
Pulse Test
0.1
40
160
Case Temperature TC (°C)
0.08
0.02
0
80
120
0
0.04
0.06
Static Drain to Source on State
Resistance vs. Temperature
ID = 30 A
20 A
10 A
30 A
10 A, 20 A
VGS = 4 V
VGS = 10 V
Pulse Test
–40
Ta = –25
°C
Pulse Test
VDS = 10 V
25
°C
75
°C
100
120
50
Drain Current ID (A)
20
50
2
0.5
2
10
5
10
Forward Transfer Admittance
vs. Drain Current
1
5


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