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| V GS1‐2 / T| ≤10µV/°C
IG = 10pA TYP.
en = 8nV/√Hz TYP.
LOW OFFSET VOLTAGE
| V GS1‐2| ≤10mV
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Storage Temperature ‐65°C to +150°C
Operating Junction Temperature
Maximum Voltage and Current for Each Transistor – Note 1
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
Maximum Power Dissipation
Device Dissipation @ Free Air – Total 400mW @ +125°C