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LS840 Datasheet(PDF) 1 Page - Micross Components

Part No. LS840
Description  Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
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Maker  MICROSS [Micross Components]
Homepage  http://www.micross.com
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LS840 Datasheet(HTML) 1 Page - Micross Components

   
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
LOW DRIFT 
| V GS1‐2 / T| ≤5µV/°C 
LOW LEAKAGE 
IG = 10pA TYP. 
LOW NOISE 
e= 8nV/√Hz TYP. 
LOW OFFSET VOLTAGE 
| V GS1‐2|= 2mV TYP. 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +150°C 
Operating Junction Temperature 
+150°C 
Maximum Voltage and Current for Each Transistor – Note 1 
‐VGSS 
Gate Voltage to Drain or Source 
60V 
‐VDSO 
Drain to Source Voltage 
60V 
‐IG(f) 
Gate Forward Current 
50mA 
Maximum Power Dissipation 
Device Dissipation @ Free Air – Total                 400mW @ +125°C 
 
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL 
CHARACTERISTICS 
VALUE 
UNITS 
CONDITIONS 
| V GS1‐2 / T| max. 
DRIFT VS. 
TEMPERATURE 
µV/°C 
VDG=20V, ID=200µA 
TA=‐55°C to +125°C 
| V GS1‐2 | max. 
OFFSET VOLTAGE 
mV 
VDG=20V, ID=200µA 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVGSS 
Breakdown Voltage 
60 
60 
‐‐ 
VDS = 0                  ID=1nA 
BVGGO 
Gate‐To‐Gate Breakdown 
60 
‐‐ 
‐‐ 
      I G= 1nA               ID= 0               IS= 0 
 
YfSS 
TRANSCONDUCTANCE 
Full Conduction 
 
1000 
 
‐‐ 
 
4000 
 
µmho 
 
VDG= 20V         VGS= 0V      f = 1kHz 
YfS 
Typical Operation 
500 
‐‐ 
1000 
µmho 
     VDG= 20V         ID= 200µA     
|YFS1‐2 / Y FS| 
Mismatch 
‐‐ 
0.6 
%  
 
IDSS 
DRAIN CURRENT 
Full Conduction 
 
0.5 
 
 
 
mA 
 
VDG= 20V              VGS= 0V 
|IDSS1‐2 / IDSS| 
Mismatch at Full Conduction 
‐‐ 
%  
 
VGS(off) or Vp 
GATE VOLTAGE 
Pinchoff voltage 
 
 
 
4.5 
 
 
VDS= 20V               ID= 1nA 
VGS(on) 
Operating Range 
0.5 
‐‐ 
              VDS=20V                 ID=200µA 
 
‐IGmax. 
GATE CURRENT 
Operating 
 
‐‐ 
 
10 
 
50 
 
pA 
 
VDG= 20V ID= 200µA 
‐IGmax. 
High Temperature 
‐‐ 
‐‐ 
50 
nA 
TA= +125°C
 
‐IGmax. 
Reduced VDG 
‐‐ 
‐‐ 
pA 
VDG = 10V ID= 200µA 
‐IGSSmax. 
At Full Conduction 
‐‐ 
‐‐ 
100 
pA 
VDG= 20V , VDS =0 
 
YOSS 
OUTPUT CONDUCTANCE 
Full Conduction 
 
‐‐ 
 
‐‐ 
 
10 
 
µmho 
 
VDG= 20V              VGS= 0V 
YOS 
Operating 
‐‐ 
0.1 
µmho 
VDG=  20V            ID= 200µA 
|YOS1‐2
Differential 
‐‐ 
0.01 
0.1 
µmho 
 
CMR 
COMMON MODE REJECTION 
‐20 log | V GS1‐2/ V DS
 
‐‐ 
 
100 
 
‐‐ 
 
dB 
 
∆VDS = 10 to 20V        ID=200µA 
‐20 log | V GS1‐2/ V DS
‐‐ 
75 
‐‐ 
∆VDS = 5 to 10V        ID=200µA 
 
NF 
NOISE 
Figure 
 
‐‐ 
 
‐‐ 
 
0.5 
 
dB 
VDS= 20V      VGS= 0V       RG= 10MΩ 
f= 100Hz           NBW= 6Hz 
en 
Voltage 
‐‐ 
‐‐ 
10 
nV/√Hz 
VDS=20V   ID=200µA  f=1KHz NBW=1Hz 
‐‐ 
‐‐ 
15 
VDS=20V   ID=200µA  f=10Hz NBW=1Hz 
 
CISS 
CAPACITANCE 
Input 
 
‐‐ 
 
10  
 
pF 
 
 
VDS= 20V,   ID=200µA   
CRSS 
Reverse Transfer 
‐‐ 
1.2 
CDD 
Drain‐to‐Drain 
‐‐ 
0.1 
‐‐ 
LS840
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
LS840 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Ended Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors.
The LS840 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LS840 features a 5-
mV offset and 5-µV/°C drift.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of
manufacturing, and the symmetrical pinout prevents
improper orientation.
(See Packaging Information).
Available Packages:
LS840 / LS840 in PDIP & SOIC
LS840 / LS840 available as bare die
Please contact Micross for full package and die dimensions
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
PDIP & SOIC (Top View)


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