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2SK1528 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part No. 2SK1528
Description  Silicon N-Channel MOS FET
Download  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK1528 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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2SK1528(L), 2SK1528(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
900
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
250
µAV
DS = 720 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
3.0
4.0
I
D = 2 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
1.7
2.7
S
I
D = 2 A, VDS = 20 V *
1
Input capacitance
Ciss
740
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
305
pF
f = 1 MHz
Reverse transfer capacitance
Crss
150
pF
Turn-on delay time
t
d(on)
15
ns
I
D = 2 A, VGS = 10 V,
Rise time
t
r
60
ns
R
L = 15 Ω
Turn-off delay time
t
d(off)
100
ns
Fall time
t
f
—80
ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 4 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
800
ns
I
F = 4 A, VGS = 0,
di
F/dt = 100 A/µs
Note:
1. Pulse test
See characteristic curves of 2SK1340.


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