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2SK1336 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. 2SK1336
Description  Silicon N-Channel MOS FET
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK1336 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SK1336
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
0.3
A
Drain peak current
I
D(pulse)*
1
1.2
A
Body to drain diode reverse drain current
I
DR
0.3
A
Channel dissipation
Pch
400
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
——V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
——50
µAV
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
1.3
1.7
I
D = 0.2 A, VGS = 10 V *
1
1.8
2.5
I
D = 0.2 A, VGS = 4 V *
1
Forward transfer admittance
|yfs|
0.22
0.35
S
I
D = 0.2 A, VDS = 10 V *
1
Input capacitance
Ciss
33
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
17
pF
f = 1 MHz
Reverse transfer capacitance
Crss
5
pF
Turn-on delay time
t
d(on)
—2
—ns
I
D = 0.2 A, VGS = 10 V,
Rise time
t
r
—4
—ns
R
L = 150 Ω
Turn-off delay time
t
d(off)
—18
ns
Fall time
t
f
—16
ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 0.3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
45
ns
I
F = 0.3 A, VGS = 0,
di
F/dt = 50 A/µs
Note:
1. Pulse test


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