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STP6623 Datasheet(PDF) 1 Page - Stanson Technology |
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STP6623 Datasheet(HTML) 1 Page - Stanson Technology |
1 / 6 page STP6623 P Channel Enhancement Mode MOSFET -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6623 2010. V1 SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching. PIN CONFIGURATION SOP-8 PART MARKING SOP-8 FEATURE -60V/-10.0A, RDS(ON) = 23m (Typ.) @VGS =-10V -60V/-8.0A, RDS(ON) = 28m @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design |
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