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STN4826 Datasheet(PDF) 3 Page - Stanson Technology |
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STN4826 Datasheet(HTML) 3 Page - Stanson Technology |
3 / 6 page STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4826 2013. V1 3 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250 uA 0.8 2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA VDS=48V,VGS=0V 1 Zero Gate Voltage Drain Current IDSS TJ=55℃ VDS=48V,VGS=0V 5 uA On-State Drain Current ID(on) VDS≦5V,VGS=4.5V 20 A Drain-source On-Resistance RDS(on) VGS=10V, ID=8A VGS=4.5V, ID=4A 0.030 0.040 0.038 0.045 Ω Forward Tran Conductance gfs VDS=5.0V,ID=5.3A 11 S Diode Forward Voltage VSD IS=1.7A,VGS=0V 0.8 1.0 V Dynamic Total Gate Charge Qg 10 Gate-Source Charge Qgs 3.5 Gate-Drain Charge Qgd VDS=15V,VGS=10V ID≡5.3A 3.6 nC Input Capacitance Ciss 455 Output Capacitance Coss 243 Reverse TransferCapacitance Crss VDS=15V,VGS=0V f=1MHz 45 pF 10 14 Turn-On Time td(on) tr 10 20 20 35 Turn-Off Time td(off) tf VDD=15V,RL=15Ω ID=1.4A,VGEN=10V RG=6Ω 10 15 nS |
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