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2SK1070 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SK1070 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SK1070 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage V GDO –22 V Gate to source voltage V GSO –22 V Drain current I D 50 mA Gate current I G 10 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Gate cutoff current I GSS — — –10 nA V GS = –15 V, VDS = 0 Gate to source breakdown voltage V (BR)GSS –22 — — V I G = –10 µA, VDS = 0 Drain current I DSS* 1 6 — 40 mA V DS = 5 V, VGS = 0, Pulse test Gate to source cutoff voltage V GS(off) 0 — –2.5 V V DS = 5 V, ID = 10 µA Forward transfer admittance fs y 20 30 — mS V DS = 5 V, VGS = 0, f = 1 kHz Input capacitance Ciss — 9 — pF V DS = 5 V, VGS = 0, f = 1 MHz Note: 1. The 2SK1070 is grouped by I DSS as follows. Grade B C D E Mark PIB PIC PID PIE I DSS 6 to 14 12 to 22 18 to 30 27 to 40 See characteristic curves of 2SK435. |
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Similar Description - 2SK1070 |
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