2SJ587 datasheet(1/8 Pages) HITACHI

Part #	2SJ587

Description	Silicon P Channel MOS FET High Speed Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SJ587

Silicon P Channel MOS FET

High Speed Switching

ADE-208-801 (Z)

1st.Edition.

June 1999

Features

• Low on-resistance

R

DS = 8.5 Ω typ. (VGS = -4 V , ID = -25 mA)

R

DS = 15 typ. (VGS = -2.5 V , ID = -10 mA)

• 2.5 V gate drive device.

• Small package (SMPAK)

Outline

1. Source

2. Gate

3. Drain

SMPAK

2

3

1

D

S

G

1

2

3

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Manufacturer	Part #	Datasheet	Description
Hitachi Semiconductor	2SJ576	27Kb / 5P	Silicon P Channel MOS FET High Speed Switching
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Hitachi Semiconductor	2SJ574	39Kb / 8P	Silicon P Channel MOS FET High Speed Switching
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	2SJ575	39Kb / 8P	Silicon P Channel MOS FET High Speed Switching
Renesas Technology Corp	2SJ575	167Kb / 10P	Silicon P Channel MOS FET High Speed Switching
	2SJ574	244Kb / 8P	Silicon P Channel MOS FET High Speed Switching
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