Electronic Components Datasheet Search |
|
STC6602ST6RG Datasheet(PDF) 2 Page - Stanson Technology |
|
STC6602ST6RG Datasheet(HTML) 2 Page - Stanson Technology |
2 / 8 page STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC6602 2007. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) ℃ Typical Parameter Symbol N P Unit Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ± 20 ± 20 V TA=25℃ 2.8 -2.8 Continuous Drain Current (TJ=150 ) ℃ TA=70℃ ID 2.3 -2.1 A Pulsed Drain Current IDM 10 -8 A Continuous Source Current (Diode Conduction) IS 1.25 -1.4 A TA=25℃ 1.15 Power Dissipation TA=70℃ PD 0.75 W Operation Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ T≦10sec 50 52 Thermal Resistance-Junction to Ambient Steady State RθJA 90 90 /W ℃ |
Similar Part No. - STC6602ST6RG |
|
Similar Description - STC6602ST6RG |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |