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ICE11N65FP Datasheet(PDF) 4 Page - Micross Components |
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ICE11N65FP Datasheet(HTML) 4 Page - Micross Components |
4 / 4 page Drain to Source Breakdown Voltage vs. Junction Temperature -50 25 50 75 100 125 150 0 -25 I D = 1mA V DS- Drain to Source Voltage (V) T J - Junction Temperature (°C) t - Time (seconds) Maximum Rate Forward Biased Safe Operating Area Transient Thermal Response - Junction to Case Single Pulse Tc = 25°C T = 150°C V GS = 10V R DS (ON) Limit Package Limit Thermal Limit 0.5 0.2 0.1 10us 100us 1ms 10ms DC 0.05 0.02 Single Pulse 0.1 0.01 0.9 1.0 1 0.10 1.1 10 100 1.00 1.2 0.01 0.00 0.8 1 1.0E-06 1.0E-04 1.0E-00 1.0E-02 100 1000 10 V DS- Drain to Source Voltage (V) Capacitance Crss Coss Ciss 1000 100 10 10000 100000 0 0 300 400 500 600 200 100 I D = 250µA T J - Junction Temperature (°C) Gate Threshold Voltage vs. Junction Temperature 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 25 50 75 100 125 150 0 -25 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com 4 Notes: P DM t1 t1 t2 t2 Duty Cycle, D = ICE11N65FP |
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