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2SJ450 Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part # 2SJ450
Description  Silicon P-Channel MOS FET
Download  9 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ450 Datasheet(HTML) 4 Page - Hitachi Semiconductor

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2SJ450
4
2.0
1.5
1.0
0.5
0
50
100
150
200
Power vs. Temperature Derating
Case Temperature
Tc (
°C)
Test Condition :
When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)
Maximum Safe Operation Area
0.1
0.3
1
3
10
30
100
Ta = 25
°C
10
µ
s
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
Operation in
this area is
limited by R DS(on)
Drain to Source Voltage
V
(V)
DS
–2.0
–1.6
–1.2
–0.8
–0.4
0
–2
–4
–6
–8
–10
V
= –1.5 V
GS
–10 V –6 V
–4 V
–3 V
–2.5 V
–2 V
Typical Output Characteristics
Drain to Source Voltage
V
(V)
DS
Pulse Test
–2.0
–1.6
–1.2
–0.8
–0.4
0
–1
–2
–3
–4
–5
Tc = 75
°C
25
°C
–25
°C
Gate to Source Voltage
V
(V)
GS
Typical Transfer Characteristics
V
= –10 V
Pulse Test
DS


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