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2SJ317 Datasheet(PDF) 5 Page - Hitachi Semiconductor

Part # 2SJ317
Description  Silicon P-Channel MOS FET
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ317 Datasheet(HTML) 5 Page - Hitachi Semiconductor

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2SJ317
5
2000
1000
500
200
100
50
20
–0.1 –0.2
–0.5 –1.0
–2
–5
–10
Reverse Drain Current
I
(A)
DR
di/dt = 10 A/µs
V
= 0
Reverse Recovery Time vs.
Reverse Drain Current
GS
2000
1000
500
200
100
50
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
Drain Current
I
(A)
D
td(on)
td(off)
tr
tf
Switching Time vs. Drain Current
V
= –4 V
V
= –10 V
PW = 5 µs
Duty cycle 1 %
.
.
<
=
GS
DD
–25
–20
–15
–10
–5
24
6
8
10
Gate Charge
Qg (nc)
VDS
V
= –10 V
I
= –2 A
Pulse test
0
VGS
DD
D
–10
–8
–6
–4
–2
0
Dynamic Input Characteristics
1000
500
200
100
50
20
10
–0.1 –0.2
–0.5 –1.0
–2
–5
–10
Drain to Source Voltage
V
(V)
DS
V
= 0
f = 1 MHz
Coss
Ciss
GS
Crss
Typical Capacitance vs.
Drain to Source Voltage


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