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CTLDM7590 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CTLDM7590 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 3 page CTLDM7590 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7590 is an enhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. MARKING CODE: 2 APPLICATIONS: • Load/Power Switches • Boost/Buck Converters • Battery Charging/Power Management FEATURES: • ESD protection up to 2kV • Power dissipation: 125mW • Low rDS(ON) • Low threshold voltage • Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm TLMTM leadless surface mount package MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8.0 V Continuous Drain Current (Steady State) ID 140 mA Pulsed Drain Current, tp=10μs ID 600 mA Power Dissipation PD 125 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 1000 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=5.0V, VDS=0 100 nA IDSS VDS=5.0V, VGS=0 50 nA IDSS VDS=16V, VGS=0 100 nA BVDSS VGS=0, ID=250μA 20 V VGS(th) VDS=VGS, ID=250μA 0.4 1.0 V rDS(ON) VGS=4.5V, ID=100mA 4.0 5.0 Ω rDS(ON) VGS=2.5V, ID=50mA 5.5 7.0 Ω rDS(ON) VGS=1.8V, ID=20mA 8.0 10 Ω rDS(ON) VGS=1.5V, ID=10mA 11 17 Ω rDS(ON) VGS=1.2V, ID=1.0mA 20 Ω Qg(tot) VDS=10V, VGS=4.5V, ID=100mA 0.50 nC Qgs VDS=10V, VGS=4.5V, ID=100mA 0.17 nC Qgd VDS=10V, VGS=4.5V, ID=100mA 0.11 nC gFS VDS=5.0V, ID=125mA 140 mS Crss VDS=15V, VGS=0, f=1.0MHz 4.0 pF Ciss VDS=15V, VGS=0, f=1.0MHz 10 pF Coss VDS=15V, VGS=0, f=1.0MHz 3.7 pF ton VDD=10V, VGS=4.5V, ID=200mA 35 ns toff VDD=10V, VGS=4.5V, ID=200mA 100 ns TLM3D6D8 CASE R3 (21-September 2012) www.centr a lsemi.com |
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