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BC109C Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. BC109C
Description  NPN SILICON TRANSISTOR
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

BC109C Datasheet(HTML) 1 Page - Central Semiconductor Corp

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BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC107, BC108,
BC109 series types are small signal NPN silicon
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
BC107
BC108
BC109
UNITS
Collector-Base Voltage
VCBO
50
30
30
V
Collector-Emitter Voltage
VCEO
45
25
25
V
Emitter-Base Voltage
VEBO
6.0
5.0
5.0
V
Continuous Collector Current
IC
200
mA
Power Dissipation
PD
600
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
JC
175
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=45V (BC107)
15
nA
ICBO
VCB=45V, TA=125°C (BC107)
4.0
μA
ICBO
VCB=25V (BC108, BC109)
15
nA
ICBO
VCB=25V, TA=125°C (BC108, BC109)
4.0
μA
BVCEO
IC=2.0mA (BC107)
45
V
BVCEO
IC=2.0mA (BC108, BC109)
25
V
BVEBO
IE=10μA (BC107)
6.0
V
BVEBO
IE=10μA (BC108, BC109)
5.0
V
VCE(SAT)
IC=10mA, IB=0.5mA
0.25
V
VCE(SAT)
IC=100mA, IB=5.0mA
0.6
V
VBE(SAT)
IC=10mA, IB=0.5mA
0.7
0.83
V
VBE(SAT)
IC=100mA, IB=5.0mA
1.0
1.05
V
VBE(ON)
VCE=5.0V, IC=2.0mA
0.55
0.7
V
VBE(ON)
VCE=5.0V, IC=10mA
0.77
V
hFE
VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B)
40
hFE
VCE=5.0V, IC=10μA (BC108C, BC109C)
100
hFE
VCE=5.0V, IC=2.0mA (BC107)
110
450
hFE
VCE=5.0V, IC=2.0mA (BC107A)
110
220
hFE
VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200
450
hFE
VCE=5.0V, IC=2.0mA (BC108C, BC109C)
420
800
TO-18 CASE
R1 (16-August 2012)
www.centr a lsemi.com


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