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2N5906 Datasheet(PDF) 1 Page - Micross Components

Part No. 2N5906
Description  LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
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Maker  MICROSS [Micross Components]
Homepage  http://www.micross.com
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2N5906 Datasheet(HTML) 1 Page - Micross Components

   
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
LOW DRIFT 
| VGS1‐2 / T| = 5µV/°C TYP. 
ULTRA LOW LEAKAGE 
I= 150fA TYP. 
LOW PINCHOFF 
Vp = 2V TYP. 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +150°C 
Operating Junction Temperature 
+150°C 
Maximum Voltage and Current for Each Transistor – Note 1 
‐VGSS 
Gate Voltage to Drain or Source 
40V 
‐VDSO 
Drain to Source Voltage 
40V 
‐IG(f) 
Gate Forward Current 
10mA 
‐IG 
Gate Reverse Current 
10µA 
Maximum Power Dissipation 
Device Dissipation @ Free Air – Total                 40mW @ +125°C 
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL 
CHARACTERISTICS 
VALUE 
UNITS 
CONDITIONS 
| VGS1‐2 / T| max. 
DRIFT VS. 
TEMPERATURE 
µV/°C 
VDG=10V, ID=30µA 
TA=‐55°C to +125°C 
| V GS1‐2 | max. 
OFFSET VOLTAGE 
mV 
VDG=10V, ID=30µA 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVGSS 
Breakdown Voltage 
40 
60 
‐‐ 
VDS = 0                  ID=1nA 
BVGGO 
Gate‐To‐Gate Breakdown 
40 
‐‐ 
‐‐ 
      IG= 1nA               ID= 0               IS= 0 
 
YfSS 
TRANSCONDUCTANCE 
Full Conduction 
 
70 
 
300 
 
500 
 
µmho 
 
VDG= 10V         VGS= 0V      f = 1kHz 
YfS 
Typical Operation 
50 
100 
200 
µmho 
     VDG= 10V         ID= 30µA      f = 1kHz 
|YFS1‐2 / Y FS| 
Mismatch 
‐‐ 
%  
 
IDSS 
DRAIN CURRENT 
Full Conduction 
 
60 
 
400 
 
1000 
 
µA 
 
VDG= 10V              VGS= 0V 
|IDSS1‐2 / IDSS| 
Mismatch at Full Conduction 
‐‐ 
%  
 
VGS(off) or Vp 
GATE VOLTAGE 
Pinchoff voltage 
 
0.6 
 
 
4.5 
 
 
VDS= 10V               ID= 1nA 
VGS(on) 
Operating Range 
‐‐ 
‐‐ 
              VDS=10V                 ID=30µA 
 
‐IGmax. 
GATE CURRENT 
Operating 
 
‐‐ 
 
‐‐ 
 
 
pA 
 
VDG= 10V ID= 30µA 
‐IGmax. 
High Temperature 
‐‐ 
‐‐ 
nA 
TA= +125°C
 
‐IGSSmax. 
At Full Conduction 
‐‐ 
‐‐ 
pA 
VDS =0V      VGS= 20V 
‐IGSSmax. 
High Temperature 
‐‐ 
‐‐ 
nA 
TA= +125°C  
IGGO 
Gate‐to‐Gate Leakage 
‐‐ 
‐‐ 
pA 
VGG= 20V 
 
YOSS 
OUTPUT CONDUCTANCE 
Full Conduction 
 
‐‐ 
 
‐‐ 
 
 
 
µmho 
 
 
VDG= 10V              VGS= 0V 
YOS 
Operating 
‐‐ 
0.1 
0.1 
VDG=  10V            ID=30µA 
|YOS1‐2
Differential 
‐‐ 
0.01 
0.1 
 
CMR 
COMMON MODE REJECTION 
‐20 log |∆VGS1‐2/∆VDS
 
‐‐ 
 
90 
 
‐‐ 
 
dB 
 
 
∆VDS = 10 to 20V        ID=30µA 
CMR ‐20 log |∆VGS1‐2/∆VDS
‐‐ 
90 
‐‐ 
∆VDS = 5 to 10V         ID=30µA 
 
NF 
NOISE 
Figure 
 
‐‐ 
 
‐‐ 
 
 
dB 
VDS= 10V      VGS= 0V       RG= 10MΩ 
f= 100Hz           NBW= 6Hz 
en 
Voltage 
‐‐ 
20 
70 
nV/√Hz 
VDG=10V   ID=30µA   f=10Hz  NBW=1Hz 
 
CISS 
CAPACITANCE 
Input 
 
‐‐ 
 
‐‐ 
 
 
 
pF 
 
 
VDS= 10V       VGS= 0V       f= 1MHz 
CRSS 
Reverse Transfer 
‐‐ 
‐‐ 
1.5 
CDD 
Drain‐to‐Drain 
‐‐ 
‐‐ 
0.1 
VDG = 20V    ID=30µA      
2N5906
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-78 (Bottom View)
Available Packages:
2N5906 in TO-78
2N5906 available as bare die
Please contact Micross for full package and die dimensions
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
2N5906 Benefits:
Tight Tracking
Good matching
Ultra Low Leakage
Low Drift
The 2N5906 is a high-performance monolithic dual
JFET featuring tight matching and low drift over
temperature specifications, and is targeted for use in a
wide range of precision instrumentation applications
where tight tracking is required.
The hermetically sealed TO-78 package is well suited
for hi-reliability and harsh environment applications.
(See Packaging Information).


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