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SIR414DP-T1-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIR414DP-T1-GE3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix SiR414DP New Product Document Number: 64727 S09-0319-Rev. A, 02-Mar-09 www.vishay.com 1 N-Channel 40-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Synchronous Rectification • Secondary Side DC/DC PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 40 0.0028 at VGS = 10 V 50 38 nC 0.0032 at VGS = 4.5 V 50 Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK® SO-8 Bottom View N-Channel MOSFET G D S Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?64727). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 50a A TC = 70 °C 50a TA = 25 °C 33b, c TA = 70 °C 26b, c Pulsed Drain Current IDM 70 Continuous Source-Drain Diode Current TC = 25 °C IS 50a TA = 25 °C 4.9b, c Single Pulse Avalanche Current L = 0.1 mH IAS 40 Single Pulse Avalanche Energy EAS 80 mJ Maximum Power Dissipation TC = 25 °C PD 83 W TC = 70 °C 53 TA = 25 °C 5.4b, c TA = 70 °C 3.4b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 18 23 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.0 1.5 |
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