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2SD1209K Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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2SD1209K Datasheet(HTML) 4 Page - Hitachi Semiconductor |
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4 / 6 page  2SD1209(K) 4 0.1 0.05 0.02 0.01 0.1 0.5 0.2 10 0.5 1.0 0.2 Base to Emitter Voltage VBE (V) Typical Transfer Characteristics 25 10 VCE = 3 V Ta = 25 °C Pulse 1.0 0.5 0.2 0.01 0.1 5 2 10 0.02 0.05 Collector Current IC (A) Collector to Emitter Saturation Voltage vs. Collector Current 0.2 0.1 0.5 1.0 IC = 1000 IB Pulse Ta = –25 °C 25 75 1.0 2 5 0.5 0.2 0.01 0.1 10 0.02 0.05 Collector Current IC (A) Base to Emitter Saturation Voltage vs. Collector Current 0.2 0.1 0.5 1.0 Ta = –25 °C 25 75 IC = 1000 IB Pulse |
Similar Part No. - 2SD1209K |
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Similar Description - 2SD1209K |
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