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SP3222EBCT-LTR Datasheet(PDF) 2 Page - Exar Corporation |
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SP3222EBCT-LTR Datasheet(HTML) 2 Page - Exar Corporation |
2 / 22 page 2 Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7017 • www.exar.com SP3222EB/SP3232EB_103_081414 NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V. These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device. V CC.......................................................-0.3V to +6.0V V+ (NOTE 1).......................................-0.3V to +7.0V V- (NOTE 1)........................................+0.3V to -7.0V V+ + |V-| (NOTE 1)...........................................+13V I CC (DC VCC or GND current).........................+100mA Input Voltages TxIN, EN..............................................-0.3V to +6.0V RxIN...................................................................+15V Output Voltages TxOUT.............................................................+13.2V RxOUT, .......................................-0.3V to (V CC +0.3V) Short-Circuit Duration TxOUT....................................................Continuous Storage Temperature......................-65°C to +150°C Unless otherwise noted, the following specifications apply for V CC = +3.0V to +5.5V with TAMB = TMIN to TMAX, C1 - C4 = 0.1µF. Power Dissipation per package 20-pin SSOP (derate 9.25mW/oC above +70oC)..............750mW 18-pin SOIC (derate 15.7mW/oC above +70oC)..............1260mW 20-pin TSSOP (derate 11.1mW/oC above +70oC).............890mW 16-pin SSOP (derate 9.69mW/oC above +70oC)...............775mW 16-pin Wide SOIC (derate 11.2mW/oC above +70oC)........900mW 16-pin TSSOP (derate 10.5mW/oC above +70oC)..............850mW 16-pin nSOIC (derate 13.57mW/oC above +70oC)...........1086mW Maximum Junction Temperature .......................................+125°C Thermal Resistance ΘJA ..............................................100.4°C/W Thermal Resistance ΘJC ................................................19.0°C/W ELECTRICAL CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS CONDITIONS DC CHARACTERISTICS Supply Current 0.3 1.0 mA no load, V CC = 3.3V, T AMB = 25 oC, TxIN = GND or V CC Shutdown Supply Current 1.0 10 µA SHDN = GND, VCC = 3.3V, T AMB = 25 oC, TxIN = Vcc or GND LOGIC INPUTS AND RECEIVER OUTPUTS Input Logic Threshold LOW GND 0.8 V TxIN, EN, SHDN, Note 2 Input Logic Threshold HIGH 2.0 Vcc V Vcc = 3.3V, Note 2 Input Logic Threshold HIGH 2.4 Vcc V Vcc = 5.0V, Note 2 Input Leakage Current +0.01 +1.0 µA TxIN, EN, SHDN, T AMB = +25 oC, V IN = 0V to VCC Output Leakage Current +0.05 +10 µA Receivers disabled, V OUT = 0V to VCC Output Voltage LOW 0.4 V I OUT = 1.6mA Output Voltage HIGH V CC -0.6 V CC -0.1 V I OUT = -1.0mA DRIVER OUTPUTS Output Voltage Swing +5.0 +5.4 V All driver outputs loaded with 3kΩ to GND, T AMB = +25 oC NOTE 2: Driver Input hysteresis is typically 250mV. ABSOLUTE MAXIMUM RATINGS |
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