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SP3012-06UTG Datasheet(PDF) 2 Page - Littelfuse |
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SP3012-06UTG Datasheet(HTML) 2 Page - Littelfuse |
2 / 6 page © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 04/24/13 TVS Diode Arrays (SPA®Diodes) Low Capacitance ESD Protection - SP3012 Series CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units I PP Peak Current (t p=8/20μs) 4.0 A T OP Operating Temperature –40 to 125 °C T STOR Storage Temperature –55 to 150 °C Electrical Characteristics (T OP=25ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R ≤ 1µA 5.0 V Reverse Leakage Current I LEAK V R=5V, Any I/O to GND 1.5 µA Clamp Voltage1 V C I PP=1A, tp=8/20µs, Fwd 6.6 V I PP=2A, tp=8/20µs, Fwd 7.0 V Dynamic Resistance R DYN (V C2 - VC1) / (IPP2 - IPP1) 0.4 Ω ESD Withstand Voltage1 V ESD IEC61000-4-2 (Contact) ±12 kV IEC61000-4-2 (Air) ±25 kV Diode Capacitance1 C I/O-GND Reverse Bias=0V, f=1 MHz 0.5 pF Diode Capacitance1 C I/O-/O Reverse Bias=0V, f=1 MHz 0.3 pF Note: 1 Parameter is guaranteed by design and/or device characterization. Insertion Loss (S21) I/O to GND Capacitance vs. Bias Voltage Clamping Voltage vs. I PP Bias Voltage (V) 0.0 0.2 0.4 0.01.0 2.03.0 4.05.0 0.6 0.8 1.0 0.0 2.0 4.0 6.0 8.0 10.0 1234 Current (A) -30 -18 -15 -12 -9 -3 0 -6 -21 -24 -27 100 1000 Frequency (MHz) 0 1 2 3 4 5 6 7 8 9 10 11 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 TLP Voltage (V) Transmission Line Pulsing(TLP) Plot |
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