2SA1484 datasheet(2/7 Pages) HITACHI

Part #	2SA1484

Description	Silicon PNP Epitaxial

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Manufacturer	HITACHI [Hitachi Semiconductor]

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2SA1484

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

–90

V

Collector to emitter voltage

V

CEO

–90

V

Emitter to base voltage

V

EBO

–5

V

Collector current

I

C

–100

mA

Collector power dissipation

P

C

150

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

–90

—

V

I

C = –10 µA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

–90

—

V

I

C = –1 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

–5

—

V

I

E = –10 µA, IC = 0

Collector cutoff current

I

CBO

—

–0.1

µAV

CB = –70 V, IE = 0

Emitter cutoff current

I

EBO

—

–0.1

µAV

EB = –2 V, IC = 0

DC current transfer ratio

h

FE*

1

250

—

800

V

CE = –12 V, IC = –2 mA*

2

Collector to emitter saturation

voltage

V

CE(sat)

—

–0.15

V

I

C = –10 mA, IB = –1 mA*

2

Base to emitter saturation

voltage

V

BE(sat)

—

–1.0

V

I

C = –10 mA, IB = –1 mA*

2

Notes: 1. The 2SA1484 is grouped by h

FE as follows.

2. Pulse test

Grade

D

E

Mark

IRD

IRE

h

FE

250 to 500

400 to 800

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