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1SS198 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. 1SS198
Description  Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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1SS198 Datasheet(HTML) 2 Page - Hitachi Semiconductor

   
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1SS198
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
10
V
Average rectified current
I
O
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward current
I
F
4.5
mA
V
F = 1V
Reverse current
I
R
——70
µAV
R = 6V
Capacitance
C
1.5
pF
V
R = 1V, f = 1MHz
Rectifier efficiency
η
70
%
Vin = 2Vrms, f = 40MHz, R
L = 5kΩ,
C
L = 20pF
ESD-Capability
*1
100
V
C = 200pF, Both forward and
reverse direction 1 pulse.
Notes: 1.
Failure Criterion ; I
R ≥ 140µA at VR = 6V


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