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RJH1CV6DPQ-E0 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # RJH1CV6DPQ-E0
Description  Short circuit withstand time (5 us typ.)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH1CV6DPQ-E0 Datasheet(HTML) 6 Page - Renesas Technology Corp

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RJH1CV6DPQ-E0
Preliminary
R07DS0524EJ0700 Rev.7.00
Page 6 of 9
Jun 13, 2013
60
80
40
20
0
10
5
30
25
20
15
0
1.0
0.5
3.0
2.5
2.0
1.5
0
Diode Current Slope diF/dt (A/
µs)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Diode Current Slope diF/dt (A/
µs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope diF/dt (A/
µs)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
C-E Diode Forward Voltage VCEF (V)
Forward Current vs. Forward Voltage (Typical)
01234
Tc = 25°C
150°C
VCE = 0 V
Pulse Test
1
10
100
1000
10000
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
20
40
60
100
80
120
VGE
VCE
Collector to Emitter Voltage VCE (V)
IC = 30 A
VCC = 300 V
Tc = 25°C
VGE = 0 V
f = 1 MHz
Tc = 25°C
Cies
Coes
Cres
200
100
600
500
400
300
0
0
40
80
200
120
160
0
40
80
200
120
160
0
40
80
200
120
160
IF = 30 A
IF = 30 A
IF = 30 A
Tc = 150°C
25°C
Tc = 150°C
25°C
0
40
80
120
160
200
Tc = 150°C
25°C


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