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RJH1CV6DPQ-E0 Datasheet(PDF) 6 Page - Renesas Technology Corp |
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RJH1CV6DPQ-E0 Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page RJH1CV6DPQ-E0 Preliminary R07DS0524EJ0700 Rev.7.00 Page 6 of 9 Jun 13, 2013 60 80 40 20 0 10 5 30 25 20 15 0 1.0 0.5 3.0 2.5 2.0 1.5 0 Diode Current Slope diF/dt (A/ µs) Reverse Recovery Time vs. Diode Current Slope (Typical) Diode Current Slope diF/dt (A/ µs) Reverse Recovery Current vs. Diode Current Slope (Typical) Diode Current Slope diF/dt (A/ µs) Reverse Recovery Charge vs. Diode Current Slope (Typical) C-E Diode Forward Voltage VCEF (V) Forward Current vs. Forward Voltage (Typical) 01234 Tc = 25°C 150°C VCE = 0 V Pulse Test 1 10 100 1000 10000 Gate Charge Qg (nc) Dynamic Input Characteristics (Typical) Typical Capacitance vs. Collector to Emitter Voltage 800 600 400 200 0 0 16 12 8 4 0 20 40 60 100 80 120 VGE VCE Collector to Emitter Voltage VCE (V) IC = 30 A VCC = 300 V Tc = 25°C VGE = 0 V f = 1 MHz Tc = 25°C Cies Coes Cres 200 100 600 500 400 300 0 0 40 80 200 120 160 0 40 80 200 120 160 0 40 80 200 120 160 IF = 30 A IF = 30 A IF = 30 A Tc = 150°C 25°C Tc = 150°C 25°C 0 40 80 120 160 200 Tc = 150°C 25°C |
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