NVTA7002N datasheet(2/5 Pages) ONSEMI

Part #	NVTA7002N

Description	30 V, 154 mA, Single, N?묬hannel, Gate ESD Protection, SC-75

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NTA7002N, NVTA7002N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 100 mA

30

V

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 30 V

1.0

mA

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 20 V,

T = 85 °C

1.0

mA

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±10 V

±25

mA

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±5 V

±1.0

mA

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±5 V

T = 85 °C

±1.0

mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 100 mA

0.5

1.0

1.5

V

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 154 mA

1.4

7.0

W

VGS = 2.5 V, ID = 154 mA

2.3

7.5

Forward Transconductance

gFS

VDS = 3 V, ID = 154 mA

80

mS

CAPACITANCES

Input Capacitance

CISS

VDS = 5.0 V, f = 1 MHz,

VGS = 0 V

11.5

20

pF

Output Capacitance

COSS

10

15

Reverse Transfer Capacitance

CRSS

3.5

6.0

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDS = 5.0 V,

ID = 75 mA, RG = 10 W

13

ns

Rise Time

tr

15

ns

Turn−Off Delay Time

td(OFF)

98

Fall Time

tf

60

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 154 mA

0.77

0.9

V

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

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