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R5509-42 Datasheet(PDF) 4 Page - Hamamatsu Corporation |
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R5509-42 Datasheet(HTML) 4 Page - Hamamatsu Corporation |
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4 / 12 page  Sample 6 B-Doped Si (111) Sample 7 InGaAsP/InP Sample 8 APPLICATION EXAMPLES Photoluminescence measurement GComparison with Ge PIN photodiode low resistivity wafer 0.005-0.2 Ωcm 300K TPMHB0451EC 77K TPMHB0453EC ( ) room temperature 1200 1000 1400 WAVELENGTH (nm) R5509-42 Ge PIN-PD (77 K) EXCITATION LIGHT: Ar LASER (514.5 nm) SAMPLE TEMPERATURE: 300 K 1200 1300 1250 1350 1400 WAVELENGTH (nm) R5509-72 Ge PIN PD (77 K) EXCITATION LIGHT: Ar LASER (514.5 nm) 200 µW SAMPLE TEMPERATURE: 77 K 77K 300K TPMHB0617EA TPMHB0618EA ( ) room temperature SAMPLE TEMPERATURE SAMPLE TEMPERATURE Data was measured with a near infrared measurement system described later. SAMPLE TEMPERATURE SAMPLE TEMPERATURE InGaAsP/InP An epitaxial wafer at the room temper- ature can be evaluated. Photoluminescence measurement in 77K sample is possible at low power excitation lights from a few to tens of micro-watts. p + InP SUB 350 µm p + InP 2 µm p - InGaAsP 2 µm p - InP 0.02 µm 2 × 1016 cm-3 TPMHC0187EB 1100 1200 1300 1400 WAVELENGTH (nm) 1500 1600 1700 EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.5 × 0.5 mm SAMPLE TEMPERATURE: 300K EXCITATION LIGHT POWER: 0.6 mW EXCITATION LIGHT POWER: 3 mW 1100 1200 1300 1400 WAVELENGTH (nm) 1500 1600 1700 EXCITATION LIGHT POWER: 8 µW EXCITATION LIGHT POWER: 50 µW EXCITATION LIGHT POWER: 0.6 mW EXCITATION LIGHT POWER: 3 mW EXCITATION LIGHT: SHG Nd: YAG (532 nm) SLIT: 0.2 × 0.2 mm SAMPLE TEMPERATURE: 77K The R5509-42 PMT provides high detection effi- ciency that allows detecting a distinct photolumi- nescent peak with a high S/N ratio from a room temperature sample. The data were taken with a relatively weak excita- tion in order to compare with a germanium detec- tor (Ge PIN PD) which did not show a clear peak. InGaAs/InP photoluminescence measurements were performed under weak excitation conditions in order to compare the detection limit between the R5509-72 and a Ge PIN photodiode. The result proves that the R5509-72 allows to detect a peak output in the vicinity of 1.3 µm which is undetectable with the Ge PIN pho- todiode. In addition to the improvement in the detection limit at low light levels in the NIR region, the R5509-72 pro- vides excellent time response, therefore, time-resolved photometry in the NIR region is now possible. |
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