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FZTA14TA Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. FZTA14TA
Description  SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR
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Maker  ETC2 [List of Unclassifed Manufacturers]
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SOT223 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – JANUARY 1996
PARTMARKING DETAIL:-
DEVICE TYPE IN FULL
COMPLEMENTARY TYPE :-
FZTA64
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
VCES
30
V
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
10
V
Continuous Collector Current
IC
1A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CES
30
V
IC=100µA, VBE=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=30V, IE=0
Emitter Cut-Off Current IEBO
100
nA
VEB=10V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.5
1.6
V
V
IC=100mA, IB=0.1mA*
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
2.0
V
IC=100mA, VCE=5V*
Base-Emitter
Saturation Voltage
VBE(sat)
2.0
2.2
V
V
IC=100mA, IB=0.1mA
IC=1A, IB=1mA
Static Forward Current
Transfer Ratio
hFE
10K
20K
5K
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=1A, VCE=5V*
Transition Frequency
fT
170
MHz
IC=50mA, VCE=5V*
f=20MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT38C datasheet.
FZTA14
SOT223
C
B
E
C
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