FQD7P06TF datasheet(4/8 Pages) FAIRCHILD

Part #	FQD7P06TF

Description	P-Channel QFET MOSFET - 60 V, - 5.4 A, 450 m

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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4 / 8 page

FQD7P06 Rev. C0

www.fairchildsemi.com

4

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

0

※

No te s :

1 . Z

θ JC( t ) = 4. 5

/W M a x .

℃

2 . D u ty F a c to r , D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC(t )

sin g le p u lse

D= 0 .5

0.0 2

0.2

0.05

0.1

0.01

t

1 , S q u a r e W a v e P u l s e D u r a ti o n [s e c ]

25

50

75

100

125

150

0

1

2

3

4

5

6

T

C, Case Temperature [

]

℃

10

0

10

1

10

2

10

-1

10

0

10

1

DC

10 ms

1 ms

100 s

Operation in This Area

is Limited by R

DS(on)

※

Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

-V

DS, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

※

Notes :

1. V

GS = -10 V

2. I

D = -2.7 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※

Notes :

1. V

GS = 0 V

2. I

D = -250 μ A

T

J, Junction Temperature [

oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

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