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FGB20N6S2DT Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. FGB20N6S2DT
Description  600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FGB20N6S2DT Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Package Marking and Ordering Information
Electrical Characteristics T
J = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Tape Width
Quantity
20N6S2D
FGH20N6S2D
TO-247
N/A
30
20N6S2D
FGP20N6S2D
TO-220AB
N/A
50
20N6S2D
FGB20N6S2D
TO-263AB
N/A
50
20N6S2D
FGB20N6S2DT
TO-263AB
24mm
800 units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVCES
Collector to Emitter Breakdown Voltage
IC = 250µA, VGE = 0
600
-
-
V
ICES
Collector to Emitter Leakage Current
VCE = 600V
TJ = 25°C
-
-
250
µA
TJ = 125°C-
-
2.0
mA
IGES
Gate to Emitter Leakage Current
VGE = ± 20V
-
-
±250
nA
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 7.0A,
VGE = 15V
TJ = 25°C-
2.2
2.7
V
TJ = 125°C-
1.9
2.2
V
VEC
Diode Forward Voltage
IEC = 7.0A
-
1.9
2.7
V
QG(ON)
Gate Charge
IC = 7.0A,
VCE = 300V
VGE = 15V
-
30
36
nC
VGE = 20V
-
38
45
nC
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 250µA, VCE = 600V
3.5
4.3
5.0
V
VGEP
Gate to Emitter Plateau Voltage
IC = 7.0A, VCE = 300V
-
6.5
8.0
V
SSOA
Switching SOA
TJ = 150°C, RG = 25Ω, VGE =
15V, L = 0.5mH VCE = 600V
35
-
-
A
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 25°C,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω
L = 0.5mH
Test Circuit - Figure 26
-7.7
-
ns
trI
Current Rise Time
-
4.5
-
ns
td(OFF)I
Current Turn-Off Delay Time
-
87
-
ns
tfI
Current Fall Time
-
50
-
ns
EON1
Turn-On Energy (Note 1)
-
25
-
µJ
EON2
Turn-On Energy (Note 1)
-
85
-
µJ
EOFF
Turn-Off Energy (Note 2)
-
58
75
µJ
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 125°C
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25Ω
L = 0.5mH
Test Circuit - Figure 26
-7
-
ns
trI
Current Rise Time
-
4.5
-
ns
td(OFF)I
Current Turn-Off Delay Time
-
120
145
ns
tfI
Current Fall Time
-
85
105
ns
EON1
Turn-On Energy (Note 1)
-
20
-
µJ
EON2
Turn-On Energy (Note 1)
-
125
140
µJ
EOFF
Turn-Off Energy (Note 2)
-
135
180
µJ
trr
Diode Reverse Recovery Time
IEC = 7A, dIEC/dt = 200A/µs
-
26
31
ns
IEC = 1A, dIEC/dt = 200A/µs
-
20
24
ns
RθJC
Thermal Resistance Junction-Case
IGBT
-
-
1.0
°C/W
Diode
2.2
°C/W
NOTE:
1.
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss
of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ
as the IGBT. The diode type is specified in figure 26.
2.
Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.


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