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FGB20N6S2DT Datasheet(PDF) 6 Page - Fairchild Semiconductor

Part No. FGB20N6S2DT
Description  600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FGB20N6S2DT Datasheet(HTML) 6 Page - Fairchild Semiconductor

   
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©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves (Continued)
0.5
1.0
1.5
2.5
VEC, FORWARD VOLTAGE (V)
02.0
0
2
25oC
125oC
14
8
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%,
3.0
4
6
12
10
200
100
0
IEC, FORWARD CURRENT (A)
014
4
2
125oC ta
125oC tb, trr
12
810
6
dIEC/dt = 200A/µs, VCE = 390V
50
150
250
25oC tb, trr
25o ta
25oC tb
IEC = 7A, VCE = 390V
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
40
0
60
80
100
160
20
1000
200
300
600
400
500
125oC tb
125oC ta
25oC ta
140
120
700
800
900
250
200
150
100
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
300
500
125oC, IEC = 7A
125oC, IEC = 3.5A
25oC, IEC = 3.5A
25oC, IEC = 7A
VCE = 390V
350
1000
200
300
600
400
500
700
800
900
450
400
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
3.0
5.0
4.5
6.0
5.5
IEC = 3.5A
4.0
3.5
1000
200
300
600
400
500
700
800
900
IEC = 7A
VCE = 390V, TJ = 125°C
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
3
5
4
10
6
IEC = 7A
IEC = 3.5A
7
VCE = 390V, TJ = 125°C
9
8
1000
200
300
600
400
500
700
800
900


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