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FGB20N6S2DT Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part No. FGB20N6S2DT
Description  600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FGB20N6S2DT Datasheet(HTML) 5 Page - Fairchild Semiconductor

   
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©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves (Continued)
0
20
40
VGE, GATE TO EMITTER VOLTAGE (V)
60
120
TJ = 125
oC
TJ = -55
oC
100
80
TJ = 25
oC
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%, VCE = 10V
6
8
10
12
14
16
4
QG, GATE CHARGE (nC)
IG(REF) = 1mA, RL = 42.6Ω, TJ = 25
oC
VCE = 200V
VCE = 600V
VCE = 400V
5
101520
25
35
030
6
4
8
0
16
12
10
14
2
TC, CASE TEMPERATURE (
oC)
RG = 25Ω, L = 500µH, VCE = 390V, VGE = 15V
ICE = 14A
ETOTAL = EON2 + EOFF
ICE = 7A
ICE = 3A
0.2
0
0.8
0.6
0.4
50
25
75
100
125
150
RG, GATE RESISTANCE (Ω)
ETOTAL = EON2 + EOFF
TJ = 125
oC, L = 500
µH, V
CE = 390V, VGE = 15V
0.1
0.05
10
1
ICE = 14A
1
10
100
1000
ICE = 7A
ICE = 3A
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
CRES
0
10
203040
50
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
COES
CIES
60
70
80
90
100
0.2
0.6
1.0
VGE, GATE TO EMITTER VOLTAGE (V)
6
2.0
9
2.2
2.6
2.4
810
11
12
16
2.8
PULSE DURATION = 250
µs, T
J = 25
oC
3.6
713
14
15
DUTY CYCLE < 0.5%
ICE = 14A
5
ICE = 3A
ICE = 7A
3.0
3.2
3.4


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