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FGB20N6S2DT Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. FGB20N6S2DT
Description  600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FGB20N6S2DT Datasheet(HTML) 3 Page - Fairchild Semiconductor

   
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©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
TC, CASE TEMPERATURE (
oC)
50
5
0
10
25
75
100
125
150
30
20
15
25
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
300
400
200
100
500
600
0
20
30
15
40
TJ = 150
oC, R
G = 25Ω, VGE = 15V, L = 500µH
5
10
35
25
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
400
20
10
700
100
TJ = 125
oC, R
G = 25Ω, L = 500µH, VCE = 390V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.27
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
VGE = 15V
TC = 75oC
VGE = 10V
VGE, GATE TO EMITTER VOLTAGE (V)
911
12
10
6
90
150
13
14
12
8
60
120
180
210
10
15
4
2
tSC
ISC
VCE = 390V, RG = 25Ω, TJ = 125
oC
0.50
1.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
2
4
1.25
2.0
2.25
8
6
14
TJ = 25
oC
0.75
TJ = 150
oC
12
1.5
1.75
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%, VGE = 15V
TJ = 125
oC
10
2.5
2.75
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0.50
1.0
1.5
2.0
2.5
0.75
TJ = 150
oC
1.75
1.25
TJ = 25
oC
2.25
0
2
4
8
6
14
12
10
TJ = 125
oC
PULSE DURATION = 250
µs
DUTY CYCLE < 0.5%, VGE = 10V


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