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SIHF22N60S Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHF22N60S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page SiHF22N60S www.vishay.com Vishay Siliconix S11-1882-Rev. D, 26-Sep-11 1 Document Number: 91394 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S Series Power MOSFET FEATURES • Generation One •High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Ultra Low Ron • dV/dt Ruggedness • Ultra Low Gate Charge (Qg) • Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply APPLICATIONS • PFC Power Supply Stages • Hard Switching Topologies • Solar Inverters •UPS • Motor Control •Lighting •Server Telecom Notes a. Limited by maximum junction temperature. b. Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A. d. 1.6 mm from case. e. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. PRODUCT SUMMARY VDS at TJ max. (V) 650 RDS(on) max. at 25 °C ()VGS = 10 V 0.190 Qg max. (nC) 98 Qgs (nC) 17 Qgd (nC) 25 Configuration Single N-Channel MOSFET G D S S D G TO-220 FULLPAK ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free SiHF22N60S-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 20 Gate-Source Voltage AC (f > 1 Hz) 30 Continuous Drain Currenta VGS at 10 V TC = 25 °C ID 22 A TC = 100 °C 13 Pulsed Drain Currentb IDM 65 Linear Derating Factor 2W/°C Single Pulse Avalanche Energyc EAS 690 mJ Repetitive Avalanche Energyb EAR 25 Maximum Power Dissipation PD 250 W Drain-Source Voltage Slope TJ = 125 °C dV/dt 37 V/ns Reverse Diode dV/dte 5.3 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature)d for 10 s 300 |
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