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IXTH10P60 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTH10P60 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTT10P60 IXTH10P60 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 e ∅ P TO-247 Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 Outline Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = -10V, ID = 0.5 • ID25, Note 1 5 10.5 S C iss 4665 pF C oss V GS = 0V, VDS = - 25V, f = 1MHz 437 pF C rss 157 pF t d(on) 33 ns t r 27 ns t d(off) 85 ns t f 35 ns Q g(on) 135 nC Q gs V GS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 nC Q gd 45 nC R thJC 0.42 °C/W R thCS TO-247 0.21 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. I S V GS = 0V - 10 A I SM Repetitive, Pulse Width Limited by T JM - 40 A V SD I F = IS, VGS = 0V, Note 1 - 3.0 V t rr 500 ns Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Resistive Switching Times V GS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 R G = 4.7Ω (External) I F = -10A, -di/dt = -100A/μs V R = -100V, VGS = 0V |
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