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IRFU3706CPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFU3706CPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFR/U3706CPbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.88 1.3 V TJ = 25°C, IS = 36A, VGS = 0V ––– 0.82 ––– TJ = 125°C, IS = 36A, VGS = 0V trr Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 36A, VR=20V Qrr Reverse Recovery Charge ––– 65 98 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 49 74 ns TJ = 125°C, IF = 36A, VR=20V Qrr Reverse Recovery Charge ––– 78 120 nC di/dt = 100A/µs Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA ––– 6.9 9.0 VGS = 10V, ID = 15A ––– 8.1 11 m Ω VGS = 4.5V, ID = 12A ––– 11.5 23 VGS = 2.8V, ID = 7.5A VGS(th) Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 220 mJ IAR Avalanche Current ––– 28 A Avalanche Characteristics S D G Diode Characteristics 75 280 A VSD Diode Forward Voltage Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 53 ––– ––– S VDS = 16V, ID = 57A Qg Total Gate Charge ––– 23 35 ID = 28A Qgs Gate-to-Source Charge ––– 8.0 12 nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 5.5 8.3 VGS = 4.5V Qoss Output Gate Charge ––– 16 24 VGS = 0V, VDS = 10V Rg Gate Resistance ––– 1.8 ––– Ω td(on) Turn-On Delay Time ––– 6.8 ––– VDD = 10V tr Rise Time ––– 87 ––– ID = 28A td(off) Turn-Off Delay Time ––– 17 ––– RG = 1.8Ω tf Fall Time ––– 4.8 ––– VGS = 4.5V Ciss Input Capacitance ––– 2410 ––– VGS = 0V Coss Output Capacitance ––– 1070 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz |
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