IRFR3504PbF

IRFU3504PbF

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.09

Junction-to-Ambient (PCB mount)

ˆ

–––

50

°C/W

Junction-to-Ambient

–––

110

Thermal Resistance

09/21/10

www.irf.com

1

HEXFET(R) is a registered trademark of International Rectifier.

Description

This HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this product are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These features combine to make

this design an extremely efficient and reliable device for use in

a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

S

D

G

Features

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

175°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

D-Pak

IRFR3504PbF

I-Pak

IRFU3504PbF

Parameter

Max.

Units

87

61

A

30

Pulsed Drain Current



350

Power Dissipation

140

W

Linear Derating Factor

0.92

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

240

mJ

Single Pulse Avalanche Energy Tested Value

‡

480

Avalanche Current



See Fig.12a, 12b, 15, 16

A

Repetitive Avalanche Energy

†

mJ

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

l

Lead-Free

PD - 95315B