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STL40N75LF3 Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STL40N75LF3
Description  N-channel 75 V, 16 m typ., 10 A STripFET III Power MOSFET in a PowerFLAT 5x6 package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STL40N75LF3 Datasheet(HTML) 4 Page - STMicroelectronics

 
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Electrical characteristics
STL40N75LF3
4/14
DocID023810 Rev 2
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS= 0)
ID = 250 µA
75
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 75 V,
VDS = 75 V, TC = 125 °C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = +20 / -16 V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
1
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 20 A
VGS= 5 V, ID= 20 A
16
18.7
19
22
m
Ω
m
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-
1300
228
15
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 37.5 V, ID = 40 A
VGS = 5 V
(see Figure 14)
-
12
5
5.3
-
nC
nC
nC
RG
Gate input resistance
f=1 MHz gate DC bias=0
Test signal level = 20 mV
open drain
-3.5
-
Ω
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 37.5 V, ID= 20 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 13)
-
12
25
25
3
-
ns
ns
ns
ns


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