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RMB2S Datasheet(PDF) 1 Page - General Semiconductor

Part No. RMB2S
Description  MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT FAST RECOVERY BRIDGE RECTIFIER
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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RMB2S Datasheet(HTML) 1 Page - General Semiconductor

   
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RMB2S THRU RMB4S
MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT
FAST RECOVERY BRIDGE RECTIFIER
Reverse Voltage - 200 to 400 Volts
Forward Current - 0.5 Ampere
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
♦ This series is UL recognized under Component Index,
file number E54214
♦ Glass passivated chip junctions
♦ High surge overload rating: 35A peak
♦ Saves space on printed circuit boards
♦ Fast recovery, low loss switching
♦ High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on body
Mounting Position: Any
Weight: 0.0078 ounce, 0.22 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
RMB2S
RMB4S
UNITS
Device marking code
R2
R4
Maximum repetitive peak reverse voltage
VRRM
200
400
Volts
Maximum RMS voltage
VRMS
140
280
Volts
Maximum DC blocking voltage
VDC
200
400
Volts
Maximum average forward output rectified
current at TA=30°C
- on glass-epoxy P.C.B. (NOTE 1)
I(AV)
0.5
Amp
- on aluminum substrate (NOTE 2)
0.8
Peak forward surge current 8.3msec single half sine-
wave superimposed on rated load (JEDEC Method)
IFSM
30.0
Amps
Rating for fusing (t<8.3ms)
I2t
5.0
A2sec
Maximum instantaneous forward voltage drop
per leg at 0.4A
VF
1.25
Volts
Maximum DC reverse current at
TA=25°C
5.0
rated DC blocking voltage per leg
TA=125°C
IR
100
Maximum reverse recovery time (NOTE 3)
trr
150
ns
Typical junction capacitance per leg (NOTE 4)
CJ
13.0
pF
Typical thermal resistance per leg
(NOTE 1)
R
ΘJA
85.0
(NOTE 2)
R
ΘJA
70.0
°C/W
(NOTE 1)
R
ΘJL
20.0
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
NOTES:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8 x 0.8" (2.0 x 2.0mm) mounted on 0.05 x 0.05” (1.3 x 1.3mm) solder pad
(3) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(4) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
0.029 (0.74)
0.017 (0.43)
0-8
o
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.008 (0.20)
0.004 (0.10)
0.117 (2.97)
0.107 (2.72)
0.058 (1.47)
0.054 (1.37)
0.252 (6.40)
0.272 (6.90)
0.106 (2.70)
0.090 (2.30)
0.0075 (0.19)
0.0065 (0.16)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0.144 (3.65)
0.161 (4.10)
0.205 (5.21)
0.195 (4.95)
4 (2.90)
4 (2.40)
0.038 (0.96)
0.019 (0.48)
Case Style MBS
Dimensions in inches and (millimeters)
PATENT PENDING
PATENT PENDING
PATENT PENDING
9/8/98


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