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Representative photograph,

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Specifications

Click here for a print friendly version of this datasheet.

SDP8406-002

SDP Series Silicon PhotoTransistor, Side-looking Plastic Package

Features

Side-looking plastic package

50 ° (nominal) acceptance angle

Wide sensitivity ranges

Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes

Description

The SDP8406 is an NPN silicon phototransistor molded in a side-looking

clear plastic package. The chip is positioned to accept radiation through a

plastic lens from the side of the package.

Product Specifications

Product Type

IR Component

Angular Response (Degree)

50

Light Current Minimum

1.80 mA

Light Current Maximum

3.60 mA

Package Style

Side-Looking

Package Components

Plastic

Package Color

Clear

Rise and Fall Time

15 µs

Power Dissipation

100 mW

Dark Current

100 nA

Collector-Emitter Breakdown

Voltage

30 V

Emitter-Collector Breakdown

Voltage

5 V

Collector-Emitter Saturation

Voltage

0.4 V

Comment

The radiation source is a tungsten lamp operating at a color

temperature of 2870°K.

Availability

Global

Product Name

Phototransistor

Due to regional agency approval requirements, some products may not be available in your area.

Please contact your regional Honeywell office regarding your product of choice.