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MPSA42 Datasheet(PDF) 2 Page - General Semiconductor

Part No. MPSA42
Description  Small Signal Transistors (NPN)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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MPSA42 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
MPSA42
IC = 10 mA, IB = 0
MPSA43
V(BR)CEO
V(BR)CEO
300
200
V
V
Collector-Base Breakdown Voltage
MPSA42
IC = 100 µA, IE = 0
MPSA43
V(BR)CBO
V(BR)CBO
300
200
V
V
Emitter-Base Breakdown Voltage
IE = 100 µA, IC = 0
V(BR)EBO
6–
–V
Collector-Base Cutoff Current
VCB = 200 V, IE = 0
MPSA42
VCB = 160 V, IE = 0
MPSA43
ICBO
ICBO
100
100
nA
nA
Emitter-Base Cutoff Current
VEB = 6 V, IC = 0
MPSA42
VEB = 4 V, IC = 0
MPSA43
IEBO
IEBO
100
100
nA
nA
DC Current Gain
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
hFE
hFE
25
40
40
Collector-Emitter Saturation Voltage
IC = 20 mA, IB = 2 mA
VCEsat
––
500
mV
Base-Emitter Saturation Voltage
IC = 20 mA, IB = 2 mA
VBEsat
––
900
mV
Gain-Bandwidth Product
IE = 10 mA, VCE = 20 V, f = 100 MHz
fT
50
MHz
Collector-Base Capacitance
MPSA42
VCB = 20 V, IE = 0, f = 1 MHz
MPSA43
CCBO
CCBO
3
4
pF
pF
Thermal Resistance Junction to Ambient Air
RthJA
––
2001)
K/W
1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.
MPSA42, MPSA43


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