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MSC1201Y2 Datasheet(PDF) 77 Page - Texas Instruments |
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MSC1201Y2 Datasheet(HTML) 77 Page - Texas Instruments |
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77 / 93 page  MSC1200 MSC1201 MSC1202 SBAS317E − APRIL 2004 − REVISED MAY 2006 www.ti.com 77 Flash Memory Control (FMCON) 7 6 5 4 3 2 1 0 Reset Value SFR EEh 0 PGERA 0 FRCM 0 BUSY SPM FPM 02h PGERA Page Erase. Available in both user and program modes. bit 6 0 = Disable Page Erase Mode 1 = Enable Page Erase Mode (automatically set by page_erase Boot ROM routine) FRCM Frequency Control Mode. bit 4 0 = Bypass (default) 1 = Use Delay Line. Recommended for saving power. BUSY Write/Erase BUSY Signal. bit 2 0 = Idle or Available 1 = Busy SPM Serial Programming Mode. Read-only. bit 1 0 = Indicates the device is not in serial programming mode. 1 = Indicates the device is in serial programming mode (if FPM also = 1). FPM Flash Programming Mode. Read-only. bit 0 0 = Indicates the device is operating in UAM. 1 = Indicates the device is operating in programming mode. Flash Memory Timing Control (FTCON) 7 6 5 4 3 2 1 0 Reset Value SFR EFh FER3 FER2 FER1 FER0 FWR3 FWR2 FWR1 FWR0 A5h Refer to Flash Memory Characteristics. FER3−0 Set Erase. Flash Erase Time = (1 + FER) • (MSEC + 1) • tCLK. This can be broken into multiple, shorter erase times. bits 7−4 For more Information, see Application Report SBAA137, Incremental Flash Memory Page Erase, available for download from www.ti.com. Industrial temperature range: 11ms Commercial temperature range: 5ms FWR3−0 Set Write. Set Flash Write Time = (1 + FWR) • (USEC + 1) • 5 • tCLK. Total writing time will be longer. For more bits 3−0 Information, see Application Report SBAA087, In-Application Flash Programming, available for download from www.ti.com. Range: 30 µs to 40µs. B Register (B) 7 6 5 4 3 2 1 0 Reset Value SFR F0h 00h B.7−0 B Register. This register serves as a second accumulator for certain arithmetic operations. bits 7−0 |
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