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MMBTA06 Datasheet(PDF) 2 Page - General Semiconductor

Part No. MMBTA06
Description  Small Signal Transistors (NPN)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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MMBTA06 Datasheet(HTML) 2 Page - General Semiconductor

   
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ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL
MIN.
.MAX.
UNIT
Collector-Emitter Breakdown Voltage
at IC = 1 mA, IB = 0
V(BR)CEO
80
V
Emitter-Base Breakdown Voltage
at IE = 100
µA, IC = 0
V(BR)EBO
4.0
V
Collector-Emitter Cutoff Current
VCE = 60 V, IB = 0
ICES
100
nA
Collector-Base Cutoff Current
VCB = 80 V, IE = 0
ICBO
100
nA
Collector Saturation Voltage
at IC = 100 mA, IB = 10 mA
VCEsat
0.25
V
Base-Emitter On Voltage
at IC = 10 mA, IB = 1 mA
VBE(on)
1.2
V
DC Current Gain
at VCE = 1 V, IC = 10 mA
hFE
100
at VCE = 1 V, IC = 100 mA
hFE
100
Gain-Bandwidth Product
at VCE = 2 V, IC = 10 mA, f = 100 MHz
fT
100
MHz
MMBTA06
0.59 (15)
0.2 (5)
0.03 (0.8)
0.30 (7.5)
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
0.47 (12)


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