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MMBT4401 Datasheet(PDF) 3 Page - General Semiconductor

Part No. MMBT4401
Description  SMALL SIGNAL TRANSISTORS (NPN)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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MMBT4401 Datasheet(HTML) 3 Page - General Semiconductor

   
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MMBT4401
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hfe
40
500
Ð
Output Admittance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hoe
1.0
30
mS
Delay Time (see Fig. 1)
at IB1 = 15 mA, IC = 150 mA
td
Ð15
ns
VCC = 30 V, VBE = 40 V
Rise Time (see Fig. 1)
at IB1 = 15 mA, IC = 150 mA
tr
Ð20
ns
VCC = 30 V, VBE = 40 V
Storage Time (see Fig. 2)
at IB1 = IB2 = 15 mA, IC = 150 mA
ts
Ð
225
ns
VCC = 30 V, IC = 150 mA
Fall Time (see Fig. 2)
at IB1 = IB2 = 15 mA, IC = 150 mA
tf
Ð30
ns
VCC = 30 V, IC = 150 mA
200
W
+30V
-4 V
< 2 ns
0
C * < 10 pF
S
C
< 10 pF
S
*
200
W
1.0 to 100
ms, DUTY CYCLE Å 2%
1.0 to 100
ms, DUTY CYCLE Å 2%
+30V
+16 V
-2 V
1k
W
1k
W
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
< 20 ns
0
+16 V
-14 V
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 1 - TURN-ON TIME
FIGURE 2 - TURN-OFF TIME


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