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MMBT4401 Datasheet(PDF) 2 Page - General Semiconductor

Part No. MMBT4401
Description  SMALL SIGNAL TRANSISTORS (NPN)
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Maker  GE [General Semiconductor]
Homepage  http://www.vishay.com
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MMBT4401 Datasheet(HTML) 2 Page - General Semiconductor

   
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MMBT4401
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at IC = 0.1 mA, IE = 0
V(BR)CBO
60
Ð
Volts
Collector-Emitter Breakdown Voltage(1)
at IC = 1 mA, IB = 0
V(BR)CEO
40
Ð
Volts
Emitter-Base Breakdown Voltage
at IE = 0.1 mA, IC = 0
V(BR)EBO
6.0
Ð
Volts
Collector-Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
VCEsat
Ð
0.40
Volts
at IC = 500 mA, IB = 50 mA
VCEsat
Ð
0.75
Volts
Base-Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
VBEsat
0.75
0.95
Volts
at IC = 500 mA, IB = 50 mA
VBEsat
Ð
1.20
Volts
Collector Cutoff Current
at VEB = 0.4 V, VCE = 35 V
ICEX
Ð
100
nA
Base Cutoff Current
at VEB = 0.4 V, VCE = 35 V
IBEV
Ð
100
nA
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
hFE
20
Ð
Ð
at VCE = 1 V, IC = 1 mA
hFE
40
Ð
Ð
at VCE = 1 V, IC = 10 mA
hFE
80
Ð
Ð
at VCE = 1 V, IC = 150 mA
(1)
hFE
100
300
Ð
at VCE = 2 V, IC = 500 mA
(1)
hFE
40
Ð
Ð
Input Impedance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hie
115
k
W
Voltage Feedback Ratio
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hre
0.1 ¥ 10-4
8 ¥ 10-4
Ð
Current Gain-Bandwidth Product
at VCE = 10 V, IC = 20 mA, f = 100 MHz
fT
250
Ð
MHz
Collector-Base Capacitance
at VCB = 5 V,f = 1 MHz, IE=0
CCBO
Ð
6.5
pF
Emitter-Base Capacitance
at VEB = 0.5 V,f = 1 MHz, IC=0
CEBO
Ð30
pF
NOTES:
(1) Pulse test: pulse width ²300
ms, cycle ² 2.0%


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