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MMBT3906 Datasheet(PDF) 2 Page - General Semiconductor

Part No. MMBT3906
Description  SMALL SIGNAL TRANSISTORS (PNP)
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

MMBT3906 Datasheet(HTML) 2 Page - General Semiconductor

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MMBT3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at ÐIC = 10
mA, IE = 0
ÐV(BR)CBO
40
Ð
V
Collector-Emitter Breakdown Voltage
at ÐIC = 1 mA, IB = 0
ÐV(BR)CEO
40
Ð
V
Emitter-Base Breakdown Voltage
at ÐIE = 10
mA, IC = 0
ÐV(BR)EBO
V
Collector Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
ÐVCEsat
Ð
0.25
V
at ÐIC = 50 mA, ÐIB = 5 mA
ÐVCEsat
Ð
0.4
V
Base Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
ÐVBEsat
Ð
0.85
V
at ÐIC = 50 mA, ÐIB = 5 mA
ÐVBEsat
Ð
0.95
V
Collector-Emitter Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
ÐICEV
Ð50
nA
Emitter-Base Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
ÐIEBV
Ð50
nA
DC Current Gain
at ÐVCE = 1 V, ÐIC = 0.1 mA
hFE
60
Ð
Ð
at ÐVCE = 1 V, ÐIC = 1 mA
hFE
80
Ð
Ð
at ÐVCE = 1 V, ÐIC = 10 mA
hFE
100
300
Ð
at ÐVCE = 1 V, ÐIC = 50 mA
hFE
60
Ð
Ð
at ÐVCE = 1 V, ÐIC = 100 mA
hFE
30
Ð
Ð
Input Impedance
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
hie
110
k
W
Gain-Bandwidth Product
at ÐVCE = 20 V, ÐIC = 10 mA, f = 100 MHz
fT
250
Ð
MHz
Collector-Base Capacitance
at ÐVCB = 5 V, f = 100 kHz
CCBO
Ð
4.5
pF
Emitter-Base Capacitance
at ÐVEB = 0.5 V, f = 100 kHz
CEBO
Ð10
pF


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