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MMBD7000 Datasheet(PDF) 2 Page - General Semiconductor

Part No. MMBD7000
Description  DUAL SMALL SIGNAL SWITCHING DIODE
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

MMBD7000 Datasheet(HTML) 2 Page - General Semiconductor

  MMBD7000 Datasheet HTML 1Page - General Semiconductor MMBD7000 Datasheet HTML 2Page - General Semiconductor  
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MMBD7000
ELECTRICAL CHARACTERISTICS
SYMBOL
MIN.
MAX.
UNIT
Reverse Breakdown Voltage at IR=100
mAVBR
100
-
Volts
Leakage Current
at VR = 50 V
IR
-
1.0
mA
at VR = 100 V
IR
-
3.0
mA
at VR = 50 V, Tj = 125¡C
IR
-
100
mA
Forward Voltage
at IF = 1mA
VF
0.55
0.70
Volts
at IF = 10mA
VF
0.67
0.82
Volts
at IF = 100mA
VF
0.75
1.10
Volts
Capacitance
Ctot
-
1.5
pF
at VR = 0; f = 1MHZ
Reverse Recovery Time
from IF = 10mA to IR = 10 mA
trr
-
4.0
ns
measured at Irr = 1mA, RL = 100
W
Ratings at 25¡C ambient temperature unless otherwise specified (per diode).


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