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MMBD7000 Datasheet(PDF) 1 Page - General Semiconductor

Part No. MMBD7000
Description  DUAL SMALL SIGNAL SWITCHING DIODE
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

MMBD7000 Datasheet(HTML) 1 Page - General Semiconductor

  MMBD7000 Datasheet HTML 1Page - General Semiconductor MMBD7000 Datasheet HTML 2Page - General Semiconductor  
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SYMBOL
VALUE
UNIT
Reverse Voltage
VR
100
Volts
Forward Current (continuous)
IF
200
mA
Non-Repetitive Peak Forward Current
at t = 1s
IFSM
500
mA
Power Dissipation on FR-5 Board TA = 25¡C
Ptot
225
mW
Derate above 25¡C
1.8
mW/¡C
Total Device Dissipation on Alumina Substrate, TA = 25¡C
Ptot
300
mW
Derate above 25¡C
2.4
mW/¡C
Thermal Resistance
RQJA
417(1)
¡C/W
Junction to Ambient Air
556(2)
Maximum Junction Temperature
Tj
150
¡C
Storage Temperature Range
TS
Ð55 to +150
¡C
NOTES
(1) On Alumina Substrate
(2) On FR-5 Board
MMBD7000
DUAL SMALL SIGNAL SWITCHING DIODE
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ Fast switching dual diode, especially
suited for automatic insertion.
MECHANICAL DATA
Case: SOT-23 (TO-236AB) Plastic Package
Weight: approx. 0.008 g
Marking Code: M5C
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified (per diode)
2/11/99
Dimensions in inches and (millimeters)
.016 (0.4)
.037(0.95) .037(0.95)
.122 (3.1)
.016 (0.4)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.118 (3.0)
.094 (2.4)
SOT-23
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