3SK252 datasheet(3/6 Pages) NEC

Part #	3SK252

Description	RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

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Manufacturer	NEC [NEC]

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3SK252

3

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS – Drain to Source Voltage – V

DRAIN CURRENT vs.

GATE1 TO SOURCE VOLTAGE

VG1S – Gate1 to Source Voltage – V

0

FORWARD TRANSFER ADMITTANCE vs.

GATE1 TO SOURCE VOLTAGE

VG1S – Gate1 to Source Voltage – V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

ID – Drain Current – mA

INPUT CAPACITANCE vs.

GATE2 TO SOURCE VOLTAGE

VG2S – Gate2 to Source Voltage – V

VG2S = 3 V

VG1S = 1.6 V

0

5

10

15

20

25

510

VDS = 3.5 V

VG2S = 3.5 V

5

10

15

20

25

0.5

1.0

1.5

2.0

2.5

VDS = 3.5 V

f = 1 kHz

0

8

16

24

32

40

0.5

1.0

1.5

2.0

2.5

VDS = 3.5 V

f = 1 kHz

0

8

16

24

32

40

VG2S = 3.5 V

3.0 V

2.5 V

1.5 V

1.0 V

ID = 7 mA

(at VDS = 3.5 V,

VG2S = 3 V)

f = 1 MHz

–1.0

0

1.0

2.0

3.0

4.0

1.0

2.0

3.0

4.0

3.0 V

2.5 V

2.0 V

1.5 V

1.0 V

VG2S = 3.5 V

2.0 V

5.0

0

1.4 V

1.2 V

1.0 V

0.8 V

0.6 V

3.0 V

2.5 V

2.0 V

1.5 V

1.0 V

4

8

12

16

20

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

TA – Ambient Temperature – °C

0

100

25

50

75

100

125

200

300

400

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